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Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules

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Title
Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules
Author(s)
Kyungjune Cho; Misook Min; Tae-Young Kim; Hyunhak Jeong; Jinsu Pak; Jae-Keun Kim; Jingon Jang; Seok Joon Yun; Young Hee Lee; Woong-Ki Hong; Takhee Lee
Subject
electronic transport, ; field effect transistor, ; molecule adsorption, ; molybdenum disulfide
Publication Date
2015-08
Journal
ACS NANO, v.9, no.8, pp.8044 - 8053
Publisher
AMER CHEMICAL SOC
Abstract
We investigated the physical properties of molybdenum disulfide (MoS2) atomic crystals with a sulfur vacancy passivation after treatment with alkanethiol molecules including their electrical, Raman, and photoluminescence (PL) characteristics. MoS2, one of the transition metal dichalcogenide materials, is a promising two-dimensional semiconductor material with good physical properties. It is known that sulfur vacancies exist in MoS2, resulting in the n-type behavior of MoS2. The sulfur vacancies on the MoS2 surface tend to form covalent bonds with sulfur-containing groups. In this study, we deposited alkanethiol molecules on MoS2 field effect transistors (FETs) and then characterized the electrical properties of the devices before and after the alkanethiol treatment. We observed that the electrical characteristics of MoS2 FETs dramatically changed after the alkanethiol treatment. We also observed that the Raman and PL spectra of MoS2 films changed after the alkanethiol treatment. These effects are attributed to the thiol (-SH) end groups in alkanethiols bonding at sulfur vacancy sites, thus altering the physical properties of the MoS2. This study will help us better understand the electrical and optical properties of MoS2 and suggest a way of tailoring the properties of MoS2 by passivating a sulfur vacancy with thiol molecules. (Figure Presented). © 2015 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/1914
DOI
10.1021/acsnano.5b04400
ISSN
1936-0851
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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