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Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

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dc.contributor.authorHyun Jeong-
dc.contributor.authorHyeon Jun Jeong-
dc.contributor.authorHye Min Oh-
dc.contributor.authorHong C.-H.-
dc.contributor.authorSuh E.-K.-
dc.contributor.authorLerondel G.-
dc.contributor.authorMun Seok Jeong-
dc.date.accessioned2015-09-01T01:19:59Z-
dc.date.available2015-09-01T01:19:59Z-
dc.date.created2015-04-06-
dc.date.issued2015-03-
dc.identifier.issn2045-2322-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1772-
dc.description.abstractCarrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleCarrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000351358900001-
dc.identifier.scopusid2-s2.0-84925235317-
dc.identifier.rimsid19225-
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHyun Jeong-
dc.contributor.affiliatedAuthorHyeon Jun Jeong-
dc.contributor.affiliatedAuthorHye Min Oh-
dc.contributor.affiliatedAuthorMun Seok Jeong-
dc.identifier.doi10.1038/srep09373-
dc.identifier.bibliographicCitationSCIENTIFIC REPORTS, v.5, pp.9373-
dc.citation.titleSCIENTIFIC REPORTS-
dc.citation.volume5-
dc.citation.startPage9373-
dc.date.scptcdate2018-10-01-
dc.description.wostc39-
dc.description.scptc42-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusINDIUM SEGREGATION-
dc.subject.keywordPlusGAN-
dc.subject.keywordPlusBLUE-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusLAYER-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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