IBS Publications Repository: Overcoming the “retention vs. voltage” trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes

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IBS Publications RepositoryCenter for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단)1. Journal Papers (저널논문)

Overcoming the “retention vs. voltage” trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes

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Title: Overcoming the “retention vs. voltage” trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes

Author(s): Seungwon Lee; Jinhwan Lee; Hyunsoo Lee; Young Ji Yuk; Mincheol Kim; Hanul Moon; Jaewon Seo; Yongsup Park; Jeong Young Park; Seung Hwan Ko; Seungyup Yoo

Subject: Organic nano-floating gate memory c60 self-assembled monolayer interface dipole retention

Publication Date: 2013-10

Journal: ORGANIC ELECTRONICS, v.14, no.12, pp.3260 - 3266

Publisher: ELSEVIER SCIENCE BV

Abstract: Organic non-volatile memory devices with significantly enhanced retention are explored with C-60 thin-film transistors containing silver nanoparticles (Ag-NPs) within gate dielectrics as charge storage nodes. Dipolar self-assembled monolayers covering Ag-NPs effectively prevent stored charges from being lost by providing an additional energy threshold for back-tunneling process. This enables long retention even with ultrathin tunneling dielectric layers, providing a simple means to realize long retention without causing an excessive increase in operation voltage. (C) 2013 Elsevier B.V. All rights reserved.