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Overcoming the “retention vs. voltage” trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes

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Title
Overcoming the “retention vs. voltage” trade-off in nonvolatile organic memory: Ag nanoparticles covered with dipolar self-assembled monolayers as robust charge storage nodes
Author(s)
Seungwon Lee; Jinhwan Lee; Hyunsoo Lee; Young Ji Yuk; Mincheol Kim; Hanul Moon; Jaewon Seo; Yongsup Park; Jeong Young Park; Seung Hwan Ko; Seungyup Yoo
Publication Date
2013-10
Journal
ORGANIC ELECTRONICS, v.14, no.12, pp.3260 - 3266
Publisher
ELSEVIER SCIENCE BV
Abstract
Organic non-volatile memory devices with significantly enhanced retention are explored with C-60 thin-film transistors containing silver nanoparticles (Ag-NPs) within gate dielectrics as charge storage nodes. Dipolar self-assembled monolayers covering Ag-NPs effectively prevent stored charges from being lost by providing an additional energy threshold for back-tunneling process. This enables long retention even with ultrathin tunneling dielectric layers, providing a simple means to realize long retention without causing an excessive increase in operation voltage. (C) 2013 Elsevier B.V. All rights reserved.
URI
https://pr.ibs.re.kr/handle/8788114/1571
ISSN
1566-1199
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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