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Work function engineering of single layer graphene by irradiation-induced defects

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Title
Work function engineering of single layer graphene by irradiation-induced defects
Author(s)
Jong-Hun Kim; Jin Heui Hwang; Joonki Suh; Sefaattin Tongay; Sangku Kwon; C. C. Hwang; Junqiao Wu; Jeong Young Park
Publication Date
2013-10
Journal
APPLIED PHYSICS LETTERS, v.103, no.17, pp.171604 - 171605
Publisher
AMER INST PHYSICS
Abstract
We report the tuning of electrical properties of single layer graphene by a-beam irradiation. As the defect density increases upon irradiation, the surface potential of the graphene changes, as determined by Kelvin probe force microscopy and Raman spectroscopy studies. X-ray photoelectron spectroscopy studies indicate that the formation of C/O bonding is promoted as the dose of irradiation increases when at atmospheric conditions. Our results show that the surface potential of the graphene can be engineered by introducing atomic-scale defects via irradiation with high-energy particles. (C) 2013 AIP Publishing LLC.
URI
http://pr.ibs.re.kr/handle/8788114/1567
DOI
10.1063/1.4826642
ISSN
0003-6951
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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