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원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
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Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates

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Title
Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates
Author(s)
Jang, Houk; Lee, Wonho; Won, Sang M.; Ryu, Seoung Yoon; Donghun Lee; Koo, Jae Bon; Ahn, Seong-Deok; Yang, Cheol-Woong; Moon-Ho Jo; Cho, Jeong Ho; Rogers, John A.; Ahn, Jong-Hyun
Publication Date
2013-11
Journal
NANO LETTERS, v.13, no.11, pp.5600 - 5607
Publisher
AMER CHEMICAL SOC
Abstract
Two dimensional (2D) semiconductors have attracted attention for a range of electronic applications, such as transparent, flexible field effect transistors and sensors owing to their good optical transparency and mechanical flexibility. Efforts to exploit 2D semiconductors in electronics are hampered, however, by the lack of efficient methods for their synthesis at levels of quality, uniformity, and reliability needed for practical applications. Here, as an alternative 2D semiconductor, we study single crystal Si nanomembranes (NMs), formed in large area sheets with precisely defined thicknesses ranging from 1.4 to 10 nm. These Si NMs exhibit electronic properties of two-dimensional quantum wells and offer exceptionally high optical transparency and low flexural rigidity. Deterministic assembly techniques allow integration of these materials into unusual device architectures, including field effect transistors with total thicknesses of less than 12 nm, for potential use in transparent, flexible, and stretchable forms of electronics. © 2013 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/1565
ISSN
1530-6984
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
Files in This Item:
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