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Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide

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Title
Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide
Author(s)
Jo, Yongjoo; Kim, Younji; Kim, Sanghyeon; Ryoo, Eunjo; Noh, Gahee; Han, Gi-Jeong; Ji Hye Lee; Cho, Won Joon; Lee, Gil-Ho; Si-Young Choi; Lee, Daesu
Publication Date
2024-06
Journal
Nano Letters, v.24, no.23, pp.7100 - 7107
Publisher
American Chemical Society
Abstract
Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.
URI
https://pr.ibs.re.kr/handle/8788114/15294
DOI
10.1021/acs.nanolett.4c01788
ISSN
1530-6984
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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