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원자제어 저차원 전자계 연구단
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Edge and interfacial states in a two-dimensional topological insulator: Bi(111) bilayer on Bi2Te2Se

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Title
Edge and interfacial states in a two-dimensional topological insulator: Bi(111) bilayer on Bi2Te2Se
Author(s)
Sung Hwan Kim; Jin K.-H.; Park J.; Kim J.S.; Jhi S.-H.; Tae-Hwan Kim; Han Woong Yeom
Publication Date
2014-04
Journal
PHYSICAL REVIEW B, v.89, no.15, pp.155436 -
Publisher
AMER PHYSICAL SOC
Abstract
The electronic states of a single Bi(111) bilayer and its edges, suggested as a two-dimensional topological insulator, are investigated by scanning tunneling spectroscopy (STS) and first-principles calculations. Well-ordered bilayer films and islands with zigzag edges are grown epitaxially on a cleaved Bi2Te2Se crystal. The calculation shows that the band gap of the Bi bilayer closes with a formation of a new but small hybridization gap due to the strong interaction between Bi and Bi2Te2Se. Nevertheless, the topological nature of the Bi bilayer and the topological edge state are preserved only with an energy shift. The edge-enhanced local density of states are identified and visualized unambiguously by STS in good agreement with the calculation. This is a clear sign of the topological edge state, which corresponds to the quantum spin Hall state. The interfacial state between Bi and Bi2Te2Se is also identified inside the band gap region. This state exhibits a subtle edge modulation, which was previously interpreted as the evidence of the topological edge state [Yang, Phys. Rev. Lett. 109, 016801 (2012)PRLTAO0031-900710.1103/PhysRevLett.109. 016801]. © 2014 American Physical Society.
URI
http://pr.ibs.re.kr/handle/8788114/1522
DOI
10.1103/PhysRevB.89.155436
ISSN
1098-0121
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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