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Atomistic Probing of Defect-Engineered 2H-MoTe2 Monolayers

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Title
Atomistic Probing of Defect-Engineered 2H-MoTe<sub>2</sub> Monolayers
Author(s)
Okello, Odongo Francis Ngome; Dong-Hwan Yang; Seo, Seung-Young; Jewook Park; Gunho Moon; Shin, Dongwon; Chu, Yu-Seong; Yang, Sejung; Mizoguchi, Teruyasu; Moon-Ho Jo; Si-Young Choi
Publication Date
2024-03
Journal
ACS Nano, v.18, no.9, pp.6927 - 6935
Publisher
American Chemical Society
Abstract
Point defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe2 monolayers that are tactically exposed to (i) 200 degrees C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe2 samples; but interestingly, 200 degrees C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe2, respectively. While 200 degrees C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.
URI
https://pr.ibs.re.kr/handle/8788114/15013
DOI
10.1021/acsnano.3c08606
ISSN
1936-0851
Appears in Collections:
Center for Van der Waals Quantum Solids(반데르발스 양자 물질 연구단) > 1. Journal Papers (저널논문)
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