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Atomistic Probing of Defect-Engineered 2H-MoTe2 Monolayers

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dc.contributor.authorOkello, Odongo Francis Ngome-
dc.contributor.authorDong-Hwan Yang-
dc.contributor.authorSeo, Seung-Young-
dc.contributor.authorJewook Park-
dc.contributor.authorGunho Moon-
dc.contributor.authorShin, Dongwon-
dc.contributor.authorChu, Yu-Seong-
dc.contributor.authorYang, Sejung-
dc.contributor.authorMizoguchi, Teruyasu-
dc.contributor.authorMoon-Ho Jo-
dc.contributor.authorSi-Young Choi-
dc.date.accessioned2024-04-11T01:30:05Z-
dc.date.available2024-04-11T01:30:05Z-
dc.date.created2024-03-11-
dc.date.issued2024-03-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/15013-
dc.description.abstractPoint defects dictate various physical, chemical, and optoelectronic properties of two-dimensional (2D) materials, and therefore, a rudimentary understanding of the formation and spatial distribution of point defects is a key to advancement in 2D material-based nanotechnology. In this work, we performed the demonstration to directly probe the point defects in 2H-MoTe2 monolayers that are tactically exposed to (i) 200 degrees C-vacuum-annealing and (ii) 532 nm-laser-illumination; and accordingly, we utilize a deep learning algorithm to classify and quantify the generated point defects. We discovered that tellurium-related defects are mainly generated in both 2H-MoTe2 samples; but interestingly, 200 degrees C-vacuum-annealing and 532 nm-laser-illumination modulate a strong n-type and strong p-type 2H-MoTe2, respectively. While 200 degrees C-vacuum-annealing generates tellurium vacancies or tellurium adatoms, 532 nm-laser-illumination prompts oxygen atoms to be adsorbed/chemisorbed at tellurium vacancies, giving rise to the p-type characteristic. This work significantly advances the current understanding of point defect engineering in 2H-MoTe2 monolayers and other 2D materials, which is critical for developing nanoscale devices with desired functionality.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleAtomistic Probing of Defect-Engineered 2H-MoTe<sub>2</sub> Monolayers-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001173669700001-
dc.identifier.scopusid2-s2.0-85186089841-
dc.identifier.rimsid82679-
dc.contributor.affiliatedAuthorDong-Hwan Yang-
dc.contributor.affiliatedAuthorJewook Park-
dc.contributor.affiliatedAuthorGunho Moon-
dc.contributor.affiliatedAuthorMoon-Ho Jo-
dc.contributor.affiliatedAuthorSi-Young Choi-
dc.identifier.doi10.1021/acsnano.3c08606-
dc.identifier.bibliographicCitationACS Nano, v.18, no.9, pp.6927 - 6935-
dc.relation.isPartOfACS Nano-
dc.citation.titleACS Nano-
dc.citation.volume18-
dc.citation.number9-
dc.citation.startPage6927-
dc.citation.endPage6935-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusINTRINSIC STRUCTURAL DEFECTS-
dc.subject.keywordPlus2-DIMENSIONAL MATERIALS-
dc.subject.keywordPlusVISUALIZATION-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusSTEM-
dc.subject.keywordAuthor2H-MoTe2-
dc.subject.keywordAuthorpoint defect-
dc.subject.keywordAuthorvacuum-annealing-
dc.subject.keywordAuthorlaser-illumination-
dc.subject.keywordAuthorscanningtransmission electron microscopy-
dc.subject.keywordAuthordeep learning-
Appears in Collections:
Center for Van der Waals Quantum Solids(반데르발스 양자 물질 연구단) > 1. Journal Papers (저널논문)
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