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Photo-oxidative Crack Propagation in Transition Metal Dichalcogenides

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dc.contributor.authorAndrew Ben-Smith-
dc.contributor.authorSoo Ho Choi-
dc.contributor.authorStephen Boandoh-
dc.contributor.authorLee, Byung Hoon-
dc.contributor.authorVu, Duc Anh-
dc.contributor.authorNguyen, Huong Thi Thanh-
dc.contributor.authorAdofo, Laud Anim-
dc.contributor.authorJin, Jeong Won-
dc.contributor.authorKim, Soo Min-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorKi Kang Kim-
dc.date.accessioned2024-03-11T22:00:39Z-
dc.date.available2024-03-11T22:00:39Z-
dc.date.created2024-02-06-
dc.date.issued2024-01-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/14897-
dc.description.abstractMonolayered transition-metal dichalcogenides (TMDs) are easily exposed to air, and their crystal quality can often be degraded via oxidation, leading to poor electronic and optical device performance. The degradation becomes more severe in the presence of defects, grain boundaries, and residues. Here, we report crack propagation in pristine TMD monolayers grown by chemical vapor deposition under ambient conditions and light illumination. Under a high relative humidity (RH) of ∼60% and white light illumination, the cracks appear randomly. Photo-oxidative cracks gradually propagated along the grain boundaries of the TMD monolayers. In contrast, under low RH conditions of ∼2%, cracks were scarcely observed. Crack propagation is predominantly attributed to the accumulation of water underneath the TMD monolayers, which is preferentially absorbed by hygroscopic alkali metal-based precursor residues. Crack propagation is further accelerated by the cyclic process of photo-oxidation in a basic medium, leading to localized tensile strain. We also found that such crack propagation is prevented after the removal of alkali metals via the transfer of the sample to other substrates. © 2024 American Chemical Society.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titlePhoto-oxidative Crack Propagation in Transition Metal Dichalcogenides-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001154764300001-
dc.identifier.scopusid2-s2.0-85183484071-
dc.identifier.rimsid82501-
dc.contributor.affiliatedAuthorAndrew Ben-Smith-
dc.contributor.affiliatedAuthorSoo Ho Choi-
dc.contributor.affiliatedAuthorStephen Boandoh-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.contributor.affiliatedAuthorKi Kang Kim-
dc.identifier.doi10.1021/acsnano.3c08755-
dc.identifier.bibliographicCitationACS Nano, v.18, no.4, pp.3125 - 3133-
dc.relation.isPartOfACS Nano-
dc.citation.titleACS Nano-
dc.citation.volume18-
dc.citation.number4-
dc.citation.startPage3125-
dc.citation.endPage3133-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthorcrack-
dc.subject.keywordAuthorhumidity-
dc.subject.keywordAuthorphoto-oxidation-
dc.subject.keywordAuthortransition metal dichalcogenides-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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