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Sapphire substrates for large-area 2D transition metal dichalcogenides synthesis: A brief review

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dc.contributor.authorKrishna, Swathi-
dc.contributor.authorSoo Ho Choi-
dc.contributor.authorKim, Soo Min-
dc.contributor.authorKi Kang Kim-
dc.date.accessioned2024-03-11T22:00:30Z-
dc.date.available2024-03-11T22:00:30Z-
dc.date.created2024-02-06-
dc.date.issued2024-03-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/14894-
dc.description.abstractTwo-dimensional transition metal dichalcogenides (TMDs) have attracted significant attention owing to their unique physical properties, such as strong spin-orbit coupling, giant magnetoresistance, and high carrier mobility. To study their fundamentals and develop high-performance electronic devices, high-quality large-area TMD films are inevitably required. Recently, sapphire substrate has emerged as a promising wafer-scale growth platform for synthesizing TMDs via chemical vapor deposition. In this brief review, we address the synthesis of both polycrystalline and single-crystalline TMDs on c-plane and miscut sapphire substrates. In addition, post-treatment processes are investigated, including H2-treatement and oxidation, to achieve a well-defined surface structure and enhance the reproducibility of single-crystalline TMD synthesis. We conclude by offering a summary and insights into future research directions. © 2023-
dc.language영어-
dc.publisherThe Korean Physical Society-
dc.titleSapphire substrates for large-area 2D transition metal dichalcogenides synthesis: A brief review-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001172452300001-
dc.identifier.scopusid2-s2.0-85183316773-
dc.identifier.rimsid82523-
dc.contributor.affiliatedAuthorSoo Ho Choi-
dc.contributor.affiliatedAuthorKi Kang Kim-
dc.identifier.doi10.1016/j.cap.2023.11.016-
dc.identifier.bibliographicCitationCurrent Applied Physics, v.59, pp.208 - 213-
dc.relation.isPartOfCurrent Applied Physics-
dc.citation.titleCurrent Applied Physics-
dc.citation.volume59-
dc.citation.startPage208-
dc.citation.endPage213-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusOPTOELECTRONICS-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusWSE2-
dc.subject.keywordAuthorChemical vapor deposition-
dc.subject.keywordAuthorEpitaxial growth-
dc.subject.keywordAuthorMiscut-
dc.subject.keywordAuthorSapphire-
dc.subject.keywordAuthorSurface engineering-
dc.subject.keywordAuthorTransition metal dichalcogenides-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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