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Electrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide

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dc.contributor.authorLan-Anh T. Nguyen-
dc.contributor.authorJiang, Jinbao-
dc.contributor.authorTuan Dung Nguyen-
dc.contributor.authorKim, Philip-
dc.contributor.authorJoo, Min-Kyu-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorYoung Hee Lee-
dc.date.accessioned2023-09-07T22:00:30Z-
dc.date.available2023-09-07T22:00:30Z-
dc.date.created2023-08-21-
dc.date.issued2023-08-
dc.identifier.issn2520-1131-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/13893-
dc.description.abstract© 2023 Springer Nature Limited. Fluctuations are ubiquitous in magnetic materials and can cause random telegraph noise. Such noise is of potential use in systems such as spiking neuron devices, random number generators and probability bits. Here we report electrically tunable magnetic fluctuations and random telegraph noise in multilayered vanadium-doped tungsten diselenide (WSe2) using vertical tunnelling heterostructure devices composed of graphene/vanadium-doped WSe2/graphene and magnetoresistance measurements. We identify bistable magnetic states through discrete Gaussian peaks in the random telegraph noise histogram and the 1/f 2 features of the noise power spectrum. Three categories of fluctuation are detected: small resistance fluctuations at high temperatures due to intralayer coupling between the magnetic domains; large resistance changes over a wide range of temperatures; and persistent large resistance changes at low temperatures due to magnetic interlayer coupling. We also show that the bistable state and cut-off frequency of the random telegraph noise can be modulated with an electric bias. © 2023, The Author(s), under exclusive licence to Springer Nature Limited.-
dc.language영어-
dc.publisherNature Research-
dc.titleElectrically tunable magnetic fluctuations in multilayered vanadium-doped tungsten diselenide-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid001045744300002-
dc.identifier.scopusid2-s2.0-85167522319-
dc.identifier.rimsid81517-
dc.contributor.affiliatedAuthorLan-Anh T. Nguyen-
dc.contributor.affiliatedAuthorTuan Dung Nguyen-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1038/s41928-023-01002-1-
dc.identifier.bibliographicCitationNature Electronics, v.6, no.8, pp.582 - 589-
dc.relation.isPartOfNature Electronics-
dc.citation.titleNature Electronics-
dc.citation.volume6-
dc.citation.number8-
dc.citation.startPage582-
dc.citation.endPage589-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusNOISE-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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