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Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning

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Title
Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
Author(s)
Sungjae Hong; Chang-Ui Hong; Sol Lee; Myeongjin Jang; Chorom Jang; Yangjin Lee; Livia Janice Widiapradja; Sam Park; Kwanpyo Kim; Young-Woo Son; Jong-Gwan Yook; Seongil Im
Publication Date
2023-07
Journal
Science advances, v.9, no.29, pp.eadh9770
Publisher
NLM (Medline)
Abstract
Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at ~200-GHz cutoff frequency (fC). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance-induced delay, so that the Ohmic graphene/MoSe2 junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher fC, which clearly demonstrates the merit of graphene at high frequencies.
URI
https://pr.ibs.re.kr/handle/8788114/13799
DOI
10.1126/sciadv.adh9770
ISSN
2375-2548
Appears in Collections:
Center for Nanomedicine (나노의학 연구단) > 1. Journal Papers (저널논문)
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