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5 nm Ultrathin Crystalline Ferroelectric P(VDF-TrFE)-Brush Tuned for Hysteresis-Free Sub 60 mV dec−1 Negative-Capacitance Transistors

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Title
5 nm Ultrathin Crystalline Ferroelectric P(VDF-TrFE)-Brush Tuned for Hysteresis-Free Sub 60 mV dec−1 Negative-Capacitance Transistors
Author(s)
Hyunmin Cho; Hye-Jin Jin; Sol Lee; Seungbae Jeon; Yongjae Cho; Sam Park; Myeongjin Jang; Livia Janice Widiapradja; Du Yeol Ryu; Ji Hoon Park; Kwanpyo Kim; Seongil Im
Publication Date
2023-06
Journal
Advanced Materials, v.35, no.22
Publisher
John Wiley and Sons Inc
Abstract
Negative-capacitance field-effect transistors (NC-FETs) have gathered enormous interest as a way to reduce subthreshold swing (SS) and overcome the issue of power dissipation in modern integrated circuits. For stable NC behavior at low operating voltages, the development of ultrathin ferroelectrics (FE), which are compatible with the industrial process, is of great interest. Here, a new scalable ultrathin ferroelectric polymer layer is developed based on trichloromethyl (CCl3)-terminated poly(vinylidene difluoride-co-trifloroethylene) (P(VDF-TrFE)) to achieve the state-of-the-art performance of NC-FETs. The crystalline phase of 5–10 nm ultrathin P(VDF-TrFE) is prepared on AlOX by a newly developed brush method, which enables an FE/dielectric (DE) bilayer. FE/DE thickness ratios are then systematically tuned at ease to achieve ideal capacitance matching. NC-FETs with optimized FE/DE thickness at a thickness limit demonstrate hysteresis-free operation with an SS of 28 mV dec−1 at ≈1.5 V, which competes with the best reports. This P(VDF-TrFE)-brush layer can be broadly adapted to NC-FETs, opening an exciting avenue for low-power devices. © 2023 Wiley-VCH GmbH.
URI
https://pr.ibs.re.kr/handle/8788114/13558
DOI
10.1002/adma.202300478
ISSN
0935-9648
Appears in Collections:
Center for Nanomedicine (나노의학 연구단) > 1. Journal Papers (저널논문)
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