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나노 구조 물리 연구단
나노구조물리 연구단
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Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors Highly Cited Paper

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dc.contributor.authorSang Hoon Chae-
dc.contributor.authorYu, Woo Jong-
dc.contributor.authorJung Jun Bae-
dc.contributor.authorDinh Loc Duong-
dc.contributor.authorPerello, David-
dc.contributor.authorHye Yun Jeong-
dc.contributor.authorQuang Huy Ta-
dc.contributor.authorThuc Hue Ly-
dc.contributor.authorQuoc An Vu-
dc.contributor.authorYun, Minhee-
dc.contributor.authorDuan, Xiangfeng-
dc.contributor.authorLee, Young Hee-
dc.date.available2015-04-20T07:03:02Z-
dc.date.created2014-08-11-
dc.date.issued2013-05-
dc.identifier.issn1476-1122-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1342-
dc.description.abstractDespite recent progress in producing transparent and bendable thin-film transistors using graphene and carbon nanotubes, the development of stretchable devices remains limited either by fragile inorganic oxides or polymer dielectrics with high leakage current. Here we report the fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer. The wrinkled Al2O3 layer contained effective built-in air gaps with a small gate leakage current of 10-13 A. The resulting devices exhibited an excellent on/off ratio of ∼10 5, a high mobility of ∼40 cm2V-1s-1 and a low operating voltage of less than 1 V. Importantly, because of the wrinkled dielectric layer, the transistors retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation. No significant performance loss was observed after stretching and releasing the devices for over 1,000 times. The sustainability and performance advances demonstrated here are promising for the adoption of stretchable electronics in a wide variety of future applications. © 2013 Macmillan Publishers Limited. All rights reserved.-
dc.languageENG-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleTransferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors-
dc.typeArticle-
dc.type.rimsA-
dc.identifier.wosid000317954800009-
dc.identifier.scopusid2-s2.0-84876693282-
dc.description.wostc155-
dc.date.tcdate2018-10-01-
dc.date.scptcdate2018-10-01-
dc.subject.keywordDielectric layer-
dc.subject.keywordFuture applications-
dc.subject.keywordGate-leakage current-
dc.subject.keywordInorganic dielectrics-
dc.subject.keywordLow operating voltage-
dc.subject.keywordNanotube transistors-
dc.subject.keywordPolymer dielectrics-
dc.subject.keywordStretchable electronics-
dc.subject.keywordDielectric materials-
dc.subject.keywordField effect transistors-
dc.subject.keywordGraphene-
dc.subject.keywordCarbon nanotubes-
dc.contributor.affiliatedAuthorSang Hoon Chae-
dc.contributor.affiliatedAuthorLee, Young Hee-
dc.identifier.bibliographicCitationNATURE MATERIALS, v.12, no.5, pp.403 - 409-
dc.description.scptc162-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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