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Electrical Transport Properties Driven by Unique Bonding Configuration in γ-GeSe

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Title
Electrical Transport Properties Driven by Unique Bonding Configuration in γ-GeSe
Author(s)
Jeongsu Jang; Joonho Kim; Dongchul Sung; Jong Hyuk Kim; Joong-Eon Jung; Sol Lee; Jinsub Park; Chaewoon Lee; Heesun Bae; Seongil Im; Kibog Park; Young Jai Choi; Suklyun Hong; Kwanpyo Kim
Publication Date
2023-04
Journal
Nano Letters, v.23, no.8, pp.3144 - 3151
Publisher
American Chemical Society
Abstract
Group IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the electrical and thermoelectric properties of γ-GeSe, a recently identified polymorph of GeSe. γ-GeSe exhibits high electrical conductivity (∼106 S/m) and a relatively low Seebeck coefficient (9.4 μV/K at room temperature) owing to its high p-doping level (5 × 1021 cm-3), which is in stark contrast to other known GeSe polymorphs. Elemental analysis and first-principles calculations confirm that the abundant formation of Ge vacancies leads to the high p-doping concentration. The magnetoresistance measurements also reveal weak antilocalization because of spin-orbit coupling in the crystal. Our results demonstrate that γ-GeSe is a unique polymorph in which the modified local bonding configuration leads to substantially different physical properties.
URI
https://pr.ibs.re.kr/handle/8788114/13383
DOI
10.1021/acs.nanolett.2c04425
ISSN
1530-6984
Appears in Collections:
Center for Nanomedicine (나노의학 연구단) > 1. Journal Papers (저널논문)
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