Spectroscopic investigation of the hole states in Ni-deficient NiO films

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Title
Spectroscopic investigation of the hole states in Ni-deficient NiO films
Author(s)
Deok-Yong Cho; Seul Ji Song; Un Ki Kim; Kyung Min Kim; Han-Koo Lee; Cheol Seong Hwang
Publication Date
2013-07
Journal
JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.28, pp.4334 - 4338
Publisher
ROYAL SOC CHEMISTRYROYAL SOC CHEMISTRY
Abstract
The influence of Ni vacancies on the chemistry and electronic structure of NiO thin films was investigated using X-ray absorption spectroscopy and extended X-ray absorption fine structure analysis. Changes in the electronic structures upon partial oxidation are mainly addressed. It is strongly suggested that the hole carriers are mostly delocalized on oxygen sites while localized holes coexist at both Ni and O sites. Such delocalized carriers are found to be depleted by capping with a thin n-type TiO2 layer. This suggests that the defect states can be healed effectively by the TiO2 capping and its density can be tuned for functionality as a base p-type oxide material. The relationship with threshold resistive switching behavior is also discussed. (c) The Royal Society of Chemistry 2013
URI
https://pr.ibs.re.kr/handle/8788114/1302
ISSN
2050-7526
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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