Forming time of conducting channels in double-layer Pt/Ta2O5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories

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Title
Forming time of conducting channels in double-layer Pt/Ta2O5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories
Author(s)
Hyang Keun Yoo; Bosoo Kang; Shin Buhm Lee
Publication Date
2013-07
Journal
THIN SOLID FILMS, v.540, no., pp.190 - 193
Publisher
ELSEVIER SCIENCE SA
Abstract
Oxide double-layer systems have recently attracted much attention, owing to their excellent performance as nonvolatile bipolar resistance memory. In this study, we measured the time required to form conducting channels (i.e., the forming time) in double-layer Pt/Ta2O5/TaOx/Pt cells and single-layer Pt/TaOx/Pt cells by applying a pulse-waveformvoltage signal. The voltage amplitude dependence of forming times in both samples revealed nonlinearities with nine orders of magnitude. By investigating their temperature dependence,we found that channel formation for both samples can be attributed to thermally assisted dielectric breakdown.© 2013 Published by Elsevier B.V.
URI
https://pr.ibs.re.kr/handle/8788114/1301
ISSN
0040-6090
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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