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Temperature dependence of the electronic structure of two-dimensional Na gas on the Si(111)-7 x 7 surface

DC Field Value Language
dc.contributor.authorShin, H-C-
dc.contributor.authorSeo, J. T.-
dc.contributor.authorYeom, H. W.-
dc.contributor.authorJoung Real Ahn-
dc.date.available2015-04-20T06:52:51Z-
dc.date.created2014-08-11-
dc.date.issued2013-07-
dc.identifier.issn0953-8984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/1297-
dc.description.abstractThe temperature dependence of the irreversible phase transition from a two-dimensional gas to an ordered zero-dimensional solid on the Si(111)-7 × 7 surface was studied using photoemission spectroscopy. With increasing Na coverage, the two-dimensional Na gas, which is a state of highly mobile Na atoms, undergoes a phase transition into ordered zero-dimensional magic nanoclusters at room temperature. The critical Na coverage of the phase transition was found to increase with reduced temperature. This was used to develop a gas-solid phase diagram of Na atoms on the Si(111)-7 × 7 surface as a function of Na coverage and sample temperature based on the electronic structure. The temperature dependence of the phase transition can be ascribed to the suppression of the thermal energy that is required to overcome the energetic barrier between the two-dimensional gas and the zero-dimensional solid at low temperature, where three different hopping mechanisms are related to the phase transition. © 2013 IOP Publishing Ltd.-
dc.language영어-
dc.publisherIOP PUBLISHING LTD-
dc.subjectEnergetic barriers-
dc.subjectHopping mechanism-
dc.subjectIrreversible phase-
dc.subjectRoom temperature-
dc.subjectSample temperature-
dc.subjectTemperature dependence-
dc.subjectTwo-dimensional gas-
dc.subjectZero-dimensional-
dc.subjectElectronic structure-
dc.subjectPhotoelectron spectroscopy-
dc.subjectSilicon-
dc.subjectSodium-
dc.subjectTemperature distribution-
dc.subjectTwo dimensional-
dc.titleTemperature dependence of the electronic structure of two-dimensional Na gas on the Si(111)-7 x 7 surface-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000321752800004-
dc.identifier.scopusid2-s2.0-84880278018-
dc.identifier.rimsid591ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorYeom, H. W.-
dc.contributor.affiliatedAuthorJoung Real Ahn-
dc.identifier.doi10.1088/0953-8984/25/30/305004-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS-CONDENSED MATTER, v.25, no.30, pp.305004-
dc.relation.isPartOfJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.citation.titleJOURNAL OF PHYSICS-CONDENSED MATTER-
dc.citation.volume25-
dc.citation.number30-
dc.citation.startPage305004-
dc.date.scptcdate2018-10-01-
dc.description.wostc1-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusPLASMON DISPERSION-
dc.subject.keywordPlusMETALLIZATION-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordPlusFILMS-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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