Dynamic switching mechanism of conduction/set process in Cu/a-Si/Si memristive device

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Title
Dynamic switching mechanism of conduction/set process in Cu/a-Si/Si memristive device
Author(s)
Ligang Gao; Shin Buhm Lee; Brian Hoskins; Hyang Keun Yoo; Bo Soo Kang
Publication Date
2013-07
Journal
APPLIED PHYSICS LETTERS, v.103, no.4, pp.43503-1 - 43503-4
Publisher
AMER INST PHYSICS
Abstract
The conduction/set processes of resistive switching have been systemically investigated for Cu/a-Si/Si electrochemical memristive devices. Experimental results indicate that the set process was driven by two different mechanisms, depending on the programming pulse amplitude: a purely electrical dielectric breakdown and a thermally assisted dielectric breakdown. For the latter process, we observe that the set time decreased exponentially with the increase in the programming pulse amplitude, whereas the former process shows amplitude independence. Through the temperature-dependent set transition characteristics, we argue that the filament growth in set process could be dominated by cation transport in the dielectric film. The thermal activation energy of Cu hopping in a-Si is extracted to be 0.16 eV. © 2013 AIP Publishing LLC.
URI
https://pr.ibs.re.kr/handle/8788114/1287
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
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