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강상관계 물질 연구단
강상관계 물질 연구단
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Indications of strong neutral impurity scattering in Ba(Sn,Sb)O3 single crystals

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Title
Indications of strong neutral impurity scattering in Ba(Sn,Sb)O3 single crystals
Author(s)
Hyung Joon Kim; Jiyeon Kim; Tai Hoon Kim; Woong-Jhae Lee; Byung-Gu Jeon; Ju-Young Park; Woo Seok Choi; Da Woon Jeong; Suk Ho Lee; Jaejun Yu; Tae Won Noh; Kee Hoon Kim
Publication Date
2013-10
Journal
PHYSICAL REVIEW B, v.88, no.12, pp.125204 -
Publisher
AMER PHYSICAL SOC
Abstract
It was recently discovered that a transparent n-type (Ba,La)SnO3 system has electrical mobility as high as 320 cm2 V-1 s-1 at room temperature and superior thermal stability up to ∼500 C. To understand comparatively the carrier-scattering mechanism in the doped BaSnO3, we investigate the physical properties of the single crystals of BaSn1-xSbxO3 (x = 0.03, 0.05, and 0.10), which also show the n-type characters via the Sn site doping by Sb. Transmittance of the grown single crystals in the visible spectral region turn out to be similar to that of the (Ba,La)SnO3 system, maintaining optical transparency. Temperature-dependent Hall effect measurements reveal that the electrical mobility at room temperature reaches as high as 79.4 cm2 V -1 s-1 at a carrier density of 1.02×1020 cm -3, and upon increasing carrier density further, it systematically decreases nearly proportional to the inverse of the carrier density. The overall reduced mobility of the Ba(Sn,Sb)O3 system as compared to the (Ba,La)SnO3 system is attributed to the enhanced scattering caused by the Sb ions located in the direct conduction path. Based on the inverse proportionality between the carrier density and the electrical mobility, we suggest that the neutral impurity scattering becomes particularly strong in the Ba(Sn,Sb)O3. © 2013 American Physical Society.
URI
http://pr.ibs.re.kr/handle/8788114/1244
ISSN
2469-9950
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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