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Electrical role of sulfur vacancies in MoS2: Transient current approach

DC Field Value Language
dc.contributor.authorLee, Juchan-
dc.contributor.authorKim, Myung Joon-
dc.contributor.authorJeong, Byeong Geun-
dc.contributor.authorKwon, Chan-
dc.contributor.authorYumin Cha-
dc.contributor.authorSoo Ho Choi-
dc.contributor.authorKi Kang Kim-
dc.contributor.authorJeong, Mun Seok-
dc.date.accessioned2023-01-26T02:17:55Z-
dc.date.available2023-01-26T02:17:55Z-
dc.date.created2023-01-02-
dc.date.issued2023-03-
dc.identifier.issn0169-4332-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/12435-
dc.description.abstract© 2022 Elsevier B.V.The electrical role of sulfur vacancies in MoS2 has attracted considerable attention, and numerous studies have attempted to reveal their characteristics in a donor state, an acceptor state, or a neutral state. However, there are still no definitive conclusions, and the debate continues. In this study, we investigated the effect of sulfur vacancies on the electrical properties of MoS2 using transient current measurements. After treatment with hydrazine to generate sulfur vacancies, the density of shallow traps increased by a factor of 4, whereas that of deep-level traps increased by a factor of 200. These results indicate that sulfur vacancies induce both deep- and shallow-level traps, but the trap density is higher at the deep level.-
dc.language영어-
dc.publisherElsevier BV-
dc.titleElectrical role of sulfur vacancies in MoS2: Transient current approach-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000906321000001-
dc.identifier.scopusid2-s2.0-85144319017-
dc.identifier.rimsid79580-
dc.contributor.affiliatedAuthorYumin Cha-
dc.contributor.affiliatedAuthorSoo Ho Choi-
dc.contributor.affiliatedAuthorKi Kang Kim-
dc.identifier.doi10.1016/j.apsusc.2022.155900-
dc.identifier.bibliographicCitationApplied Surface Science, v.613-
dc.relation.isPartOfApplied Surface Science-
dc.citation.titleApplied Surface Science-
dc.citation.volume613-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordAuthorChalcogen vacancies-
dc.subject.keywordAuthorCharge trapping and release-
dc.subject.keywordAuthorDeep and shallow traps-
dc.subject.keywordAuthorHysteresis-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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