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Cu doping effects on the electronic structure of Fe1-x CuxSe

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Title
Cu doping effects on the electronic structure of Fe1-x CuxSe
Author(s)
Soonsang Huh; Lu, Z.; Younsik Kim; Donghan Kim; Liu, S.B.; Ma, M.W.; Yu, L.; Zhou, F.; Dong, X.L.; Changyoung Kim; Zhao, Z.X.
Publication Date
2022-06
Journal
Physical Review B, v.105, no.24
Publisher
American Physical Society
Abstract
Using angle-resolved photoemission spectroscopy, we investigated the evolution of the electronic structure of Fe1-xCuxSe from x=0 to 0.10. We found that the substitution of Fe by Cu introduces extra electron carriers. The hole bands near the Γ point were observed to shift downward with increasing doping x and completely sank down below the Fermi level (EF) for x≥0.05. Meanwhile, the electron pockets near the M point became larger but lost the spectral weight near EF. Concomitantly, the effective mass of the electron bands increased with doping. Our results show how a metal-insulator transition behavior occurs upon Cu doping in view of the electronic structure and provide a platform to further investigation on the origin of emergent magnetic fluctuation in Fe1-xCuxSe.
URI
https://pr.ibs.re.kr/handle/8788114/12138
DOI
10.1103/PhysRevB.105.245140
ISSN
2469-9950
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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