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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Directed self-assembly of block copolymers for next generation nanolithography

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Title
Directed self-assembly of block copolymers for next generation nanolithography
Author(s)
Seong-Jun Jeong; Ju Young Kim; Bong Hoon Kim; Hyoung-Seok Moon; Sang Ouk Kim
Publication Date
2013-12
Journal
MATERIALS TODAY, v.16, no.12, pp.468 - 476
Publisher
ELSEVIER SCI LTD
Abstract
Directed self-assembly of block copolymers has received a great deal of research attention as a promising nanolithography to complement the intrinsic limitations of conventional photolithography. In this review, we highlight the recent progress in the development of the directed self-assembly process for practical utilization in semiconductor applications. Various advanced directed self-assembly approaches are examined, in which block copolymer self-assembly is synergistically integrated with conventional photolithography, such as ArF lithography or I-line lithography, via either epitaxial self-assembly or the graphoepitaxy principle. We focus on the practical advantages anticipated from directed self-assembly integration, such as pattern density multiplication, feature size uniformity improvement, line edge roughness reduction, as well as cost reduction. Additionally, a direction for future research on directed self-assembly is suggested with diverse potential applications.
URI
http://pr.ibs.re.kr/handle/8788114/1193
DOI
10.1016/j.mattod.2013.11.002
ISSN
1369-7021
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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