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Drift-dominant exciton funneling and trion conversion in 2D semiconductors on the nanogap

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dc.contributor.authorLee, Hyeongwoo-
dc.contributor.authorKoo, Yeonjeong-
dc.contributor.authorChoi, Jinseong-
dc.contributor.authorKumar, Shailabh-
dc.contributor.authorLee, Hyoung-Taek-
dc.contributor.authorJi, Gangseon-
dc.contributor.authorSoo Ho Choi-
dc.contributor.authorKang, Mingu-
dc.contributor.authorKi Kang Kim-
dc.contributor.authorPark, Hyeong-Ryeol-
dc.contributor.authorChoo, Hyuck-
dc.contributor.authorPark, Kyoung-Duck-
dc.date.accessioned2022-05-25T04:50:38Z-
dc.date.available2022-05-25T04:50:38Z-
dc.date.created2022-02-21-
dc.date.issued2022-02-
dc.identifier.issn2375-2548-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/11601-
dc.description.abstract© 2022 American Association for the Advancement of Science. Understanding and controlling the nanoscale transport of excitonic quasiparticles in atomically thin two-dimensional (2D) semiconductors are crucial to produce highly efficient nano-excitonic devices. Here, we present a nanogap device to selectively confine excitons or trions of 2D transition metal dichalcogenides at the nanoscale, facilitated by the drift-dominant exciton funneling into the strain-induced local spot. We investigate the spatiospectral characteristics of the funneled excitons in a WSe2 monolayer (ML) and converted trions in a MoS2 ML using hyperspectral tip-enhanced photoluminescence imaging with <15-nm spatial resolution. In addition, we dynamically control the exciton funneling and trion conversion rate by the gigapascal-scale tip pressure engineering. Through a drift-diffusion model, we confirm an exciton funneling efficiency of ∼25% with a significantly low strain threshold (∼0.1%), which sufficiently exceeds the efficiency of ∼3% in previous studies. This work provides a previously unexplored strategy to facilitate efficient exciton transport and trion conversion of 2D semiconductor devices.-
dc.language영어-
dc.publisherNLM (Medline)-
dc.titleDrift-dominant exciton funneling and trion conversion in 2D semiconductors on the nanogap-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000799992000019-
dc.identifier.scopusid2-s2.0-85124173596-
dc.identifier.rimsid77739-
dc.contributor.affiliatedAuthorSoo Ho Choi-
dc.contributor.affiliatedAuthorKi Kang Kim-
dc.identifier.doi10.1126/sciadv.abm5236-
dc.identifier.bibliographicCitationScience advances, v.8, no.5-
dc.relation.isPartOfScience advances-
dc.citation.titleScience advances-
dc.citation.volume8-
dc.citation.number5-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalWebOfScienceCategoryMultidisciplinary Sciences-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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