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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Complementary p- and n-type polymer doping for ambient stable graphene inverter

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Title
Complementary p- and n-type polymer doping for ambient stable graphene inverter
Author(s)
Je Moon Yun; Park S.; Hwang Y.H.; Eui-Sup Lee; Uday Maiti; Moon H.; Bo-Hyun Kim; Byeong-Soo Bae; Yong-Hyun Kim; Sang Ouk Kim
Publication Date
2014-01
Journal
ACS NANO, v.8, no.1, pp.650 - 656
Publisher
AMER CHEMICAL SOC
Abstract
Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form. © 2013 American Chemical Society.
URI
https://pr.ibs.re.kr/handle/8788114/1150
ISSN
1936-0851
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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