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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics

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Title
Development of flexible Mg and Ga co-doped ZnO thin films with wide band gap energy and transparent conductive characteristics
Author(s)
Seung Wook Shin; In Young Kim; G.V. Kishor; Yeong Yung Yoo; Young Baek Kim; Jae Yeong Heo; Gi-Seok Heo; P.S. Patil; Jin Hyeok Kim; Jeong Yong Lee
Publication Date
2014-02
Journal
JOURNAL OF ALLOYS AND COMPOUNDS, v.585, no., pp.608 - 613
Publisher
ELSEVIER SCIENCE SA
Abstract
The transparent conductive and flexible Mg and Ga co-doped ZnO (MGZO) thin films were prepared on poly-ethylene telepthalate (PET) by the RF magnetron sputtering technique at room temperature. The effects of different thicknesses on the structural, chemical, morphological, optical and electrical properties of MGZO thin films were investigated. X-ray diffraction studies showed that MGZO thin films were grown as a polycrystalline hexagonal wurtzite phase without a secondary phase. The peak intensities for the (0002) plane of MGZO thin films were enhanced with increasing thickness. A typical survey spectrum of MGZO thin films confirmed the presence of Mg, Ga, Zn and O resulting from MGZO films regardless of thickness. The MGZO thin films had a larger grain size with increasing thickness. The MGZO thin films showed the widest optical band gap energy of 3.91 eV (50 nm) and lowest electrical resistivity of 5.76 103 X cm (400 nm).
URI
https://pr.ibs.re.kr/handle/8788114/1140
ISSN
0925-8388
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
Files in This Item:
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