Chemical structures and electrical properties of atomic layerdeposited HfO2thin films grown at an extremely low temperature(≤100◦C) using O3as an oxygen sourceJeong

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Title
Chemical structures and electrical properties of atomic layerdeposited HfO2thin films grown at an extremely low temperature(≤100◦C) using O3as an oxygen sourceJeong
Author(s)
Jeong Hwan Kim; Tae Joo Park; Seong Keun Kim; Deok-Yong Cho; Hyung-Suk Jung; Sang Young Lee; Cheol Seong Hwang
Publication Date
2014-02
Journal
APPLIED SURFACE SCIENCE, v.292, no., pp.852 - 856
Publisher
ELSEVIER SCIENCE BV
Abstract
The properties of atomic layer deposited (ALD) HfO2films grown at low temperatures (≤100◦C) wereexamined for potential applications in flexible display and bioelectronics. A saturated ALD growth behav-ior was observed even at an extremely low temperature (30◦C) due to the strong oxidizing potential of O3.However, HfO2films grown at low temperatures showed a low film density and high impurity concentra-tion, because the thermal energy during film growth was insufficient to remove ligands completely fromHf ions in precursor molecule. This resulted in low dielectric constant and high leakage current densityof the films. Nevertheless, HfO2film grown at 100◦C using O3gas with a high concentration (390 g/Nm3)showed a tolerable impurity concentration with the dielectric constant of ∼16 and breakdown field of∼4 MV/cm, which are approximately two-thirds of those of HfO2film grown at 250◦C
URI
https://pr.ibs.re.kr/handle/8788114/1115
ISSN
0169-4332
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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