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Flexoelectric control of physical properties by atomic force microscopy

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Title
Flexoelectric control of physical properties by atomic force microscopy
Author(s)
Sung Min Park; Wang, Bo; Chen, Long-Qing; Tae Won Noh; Yang, Sang Mo; Lee, Daesu
Publication Date
2021-12
Journal
APPLIED PHYSICS REVIEWS, v.8, no.4
Publisher
AIP Publishing
Abstract
The past decade has witnessed the tremendous scientific and technological potential of nanoscale flexoelectricity in solids. The flexoelectric effect describes the universal generation of electric polarization in response to strain gradients and could be inversely enhanced at reduced nanoscale dimensions. Based on this unique scaling effect, nanoscale flexoelectricity has shown exciting physical phenomena, promising novel electronic, electromechanical, and photovoltaic applications. One of the most powerful ways to harness nanoscale flexoelectricity is to press the surface of a material through an atomic force microscope (AFM) tip to generate large strain gradients. This so-called AFM tip pressing allows us to locally break the inversion symmetry in any materials and study all the fascinating physical phenomena associated with inversion asymmetry. Although this technique has recently facilitated many important studies on nanoscale flexoelectricity, its effective use still requires a more solid foundation. In this review, we provide a comprehensive guideline to exploring nanoscale flexoelectricity via AFM tip pressing. We also discuss recent progress and the future research direction of AFM tip pressing-driven nanoscale flexoelectricity. (C) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
URI
https://pr.ibs.re.kr/handle/8788114/11095
DOI
10.1063/5.0067429
ISSN
1931-9401
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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