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Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors

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Title
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors
Author(s)
Hyunmin Cho; Donghee Kang; Yangjin Lee; Heesun Bae; Sungjae Hong; Yongjae Cho; Kwanpyo Kim; Yeonjin Yi; Ji Hoon Park; Seongil Im
Publication Date
2021-04-28
Journal
NANO LETTERS, v.21, no.8, pp.3503 - 3510
Publisher
AMER CHEMICAL SOC
Abstract
Molybdenum disulfide (MoS2) has been regarded as one of the most important n-type two-dimensional (2D) transition metal dichalcogenide semiconductors for nanoscale electron devices. Relatively high contact resistance (RC) remains as an issue in the 2D-devices yet to be resolved. Reliable technique is very compelling to practically produce low RC values in device electronics, although scientific approaches have been made to obtain a record-low RC. To resolve this practical issue, we here use thermal-evaporated ultrathin LiF between channel and source/drain metal to fabricate 2D-like MoS2 field effect transistors (FETs) with minimum RC. Under 4-bar FET method, RC less than similar to 600 Omega.mu m is achieved from the LiF/Au contact MoS2 FET. Our normal 2-bar FET with LiF thus shows the same mobility as that of 4-bar FET that should have no RC in principle. On the basis of these results, ultrathin LiF is also applied for transparent conducting oxide contact, successfully enabling transparent MoS2 FETs.
URI
https://pr.ibs.re.kr/handle/8788114/11069
DOI
10.1021/acs.nanolett.1c00180
ISSN
1530-6984
Appears in Collections:
Center for Nanomedicine (나노의학 연구단) > 1. Journal Papers (저널논문)
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