Intrinsic nature of visible-light absorption in amorphous semiconducting oxides

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Title
Intrinsic nature of visible-light absorption in amorphous semiconducting oxides
Author(s)
Youngho Kang; Hochul Song; Ho-Hyun Nahm; Snag Ho Jeon; Youngmi Cho; Seungwu Han
Publication Date
2014-03
Journal
APL Materials, v.2, no.3, pp.32108 -
Publisher
AMER INST PHYSICS
Abstract
To enlighten microscopic origin of visible-light absorption in transparent amorphous semiconducting oxides, the intrinsic optical property of amorphous InGaZnO4 is investigated by considering dipole transitions within the quasiparticle band structure. In comparison with the crystalline InGaZnO 4 with the optical gap of 3.6 eV, the amorphous InGaZnO4 has two distinct features developed in the band structure that contribute to significant visible-light absorption. First, the conduction bands are down-shifted by 0.55 eV mainly due to the undercoordinated In atoms, reducing the optical gap between extended states to 2.8 eV. Second, tail states formed by localized oxygen p orbitals are distributed over ∼0.5 eV near the valence edge, which give rise to substantial subgap absorption. The fundamental understanding on the optical property of amorphous semiconducting oxides based on underlying electronic structure will pave the way for resolving instability issues in recent display devices incorporating the semiconducting oxides. © 2014 Author(s).
URI
https://pr.ibs.re.kr/handle/8788114/1100
ISSN
2166-532X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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