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Park, Je Wook
원자제어 저차원 전자계 연구단
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Enhancing the local conductivity of Cu films using temperature-assisted agglomerated Cu nanostructures

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Title
Enhancing the local conductivity of Cu films using temperature-assisted agglomerated Cu nanostructures
Author(s)
Kim, Jiwoong; Ju, Tae-Seong; Song, Sehwan; Dooyong Lee; Sam Yeon Cho; Sang Don Bu; Wonhee Ko; An-Ping L; Jewook Park; Sungkyun Park
Subject
Agglomeration, ; Crystallinity, ; Cu nanostructure, ; Four-point probe scanning tunneling microscopy, ; Nanoscopic transports, ; Thermal annealing, ; X-ray diffraction
Publication Date
2020-02
Journal
PhyJournal of Physics D: Applied sics, v.53, no.9, pp.09LT02
Publisher
IOP Publishing Ltd
Abstract
© 2019 IOP Publishing Ltd. We investigate the structural and electrical properties of Cu film and reveal their changes as a function of post-annealing temperature. Thermal annealing of a Cu film on a dielectric substrate can improve its crystallinity; however, high-temperature annealing also leads to a morphological transformation that hinders the precise measurement of electrical properties. The enhanced crystallinity of the Cu films is verified with X-ray diffraction as the annealing temperature increases. To examine the electrical properties of the Cu film after the dewetting processes, which promotes the formation of voids and agglomerations, we utilize both conventional micro four-point probe method as well as an advanced four-point probe scanning tunneling microscopy (4P-STM) technique to measure the conductance and evolution of the microscopic structural properties. We could eliminate a deceptive effect of voids with 4P-STM technique, and disclosed a significantly reduced resistivity (1.88 ± 0.07 Ω•cm) of Cu nanostructure after post-annealing at 700 °C. We unveiled impact of crystallinity and imperfections of Cu nanostructure, and discussed the critical role of the twin grain boundaries of single-crystalline Cu (1 1 1) on an Al2O3 substrate. We anticipate that understanding the evolution of the structures and the enhanced electrical properties of the post-annealed Cu nanostructures would be important for nanoscale devices where Cu is used as an interconnecting material and could provide a new route to control the plasmonic applications
URI
https://pr.ibs.re.kr/handle/8788114/8388
DOI
10.1088/1361-6463/ab5b49
ISSN
0022-3727
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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