Large changes of graphene conductance as a function of lattice orientation between stacked layers
DC Field | Value | Language |
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dc.contributor.author | Hyunsoo Lee | - |
dc.contributor.author | Qi Y. | - |
dc.contributor.author | Sangku Kwon | - |
dc.contributor.author | Salmeron M. | - |
dc.contributor.author | Jeong Young Park | - |
dc.date.available | 2015-04-20T05:13:10Z | - |
dc.date.created | 2015-01-21 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/830 | - |
dc.description.abstract | Using the conductive tip of an atomic force microscope as an electrode, we found that the electrical conductance of graphite terraces separated by steps can vary by large factors of up to 100, depending on the relative lattice orientation of the surface and subsurface layers. This effect can be attributed to interlayer interactions that, when stacked commensurately in a Bernal sequence (ABAB…), cause the band gap to open. Misaligned layers, on the other hand, behave like graphene. Angular misorientations of a few degrees were found to cause large increases in the conductance of the top layer, with the maximum occurring around 30°. These results suggest new applications for graphene multilayers by stacking layers at various angles to control the resistance of the connected graphene ribbons in devices. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | graphene, conductivity, atomic force microscopy, lattice misorientation | - |
dc.title | Large changes of graphene conductance as a function of lattice orientation between stacked layers | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000346139700015 | - |
dc.identifier.scopusid | 2-s2.0-84916917452 | - |
dc.identifier.rimsid | 16880 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Hyunsoo Lee | - |
dc.contributor.affiliatedAuthor | Sangku Kwon | - |
dc.contributor.affiliatedAuthor | Jeong Young Park | - |
dc.identifier.doi | 10.1088/0957-4484/26/1/015702 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.1, pp.015702 | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 26 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 015702 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.scptc | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | atomic force microscopy | - |
dc.subject.keywordAuthor | conductivity | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | lattice misorientation | - |