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Wide band gap characteristic of quaternary and flexible Mg and Ga co-doped ZnO transparent conductive thin films

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Title
Wide band gap characteristic of quaternary and flexible Mg and Ga co-doped ZnO transparent conductive thin films
Author(s)
Seung Wook Shin; In Young Kim; Ki Seok Jeon; Jae Yeong Heo; Gi-Seok Heo; P.S. Patil; Jin Hyeok Kim; Jeong Yong Lee
Publication Date
2013-09
Journal
JOURNAL OF ASIAN CERAMIC SOCIETIES, v.1, no.3, pp.262 - 266
Publisher
ELSEVIER SCIENCE BV
Abstract
Transparent conductive and flexible Mg and Ga co-doped ZnO (MGZO) thin films were prepared on poly-ethylene terephthalate (PET) by RF magnetron sputtering technique at room temperature. The effects ofdifferent working pressures on the structural, chemical, morphological, optical and electrical propertiesof MGZO thin films were investigated. X-ray diffraction results indicate that all the MGZO thin films weregrown as polycrystalline wurtzite structures without secondary phases such as MgO, Ga2O3, MgGa2O4,or ZnGa2O4. The MGZO thin film prepared at 6 mTorr has the lowest value of full width at half maximum.A typical survey spectrum of all the MGZO thin films confirmed the presence of Mg, Ga, Zn and O. TheMGZO thin film prepared at 6 mTorr showed the widest optical band gap energy of 3.91 eV and lowestelectrical resistivity of 5.3 × 10−3 cm.
URI
https://pr.ibs.re.kr/handle/8788114/811
ISSN
2187-0764
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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