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복잡계 이론물리 연구단
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Spin-polaronic effects in electric shuttling in a single molecule transistor with magnetic leads

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Title
Spin-polaronic effects in electric shuttling in a single molecule transistor with magnetic leads
Author(s)
O.A. Ilinskaya; D. Radic; Hee Chul Park; I.V. Krive; R.I. Shekhter; M. Jonson
Subject
QUANTUM CONTROL, ; INSTABILITY
Publication Date
2020-08
Journal
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.122, pp.114151
Publisher
ELSEVIER SCIENCE BV
Abstract
© 2020 Elsevier B.V. Current–voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single-level movable quantum dot, are calculated. New exchange- and electromechanical coupling-induced (spin-polaronic) effects that determine strongly nonlinear current–voltage characteristics were found. In the low-voltage regime of electron transport the voltage-dependent and exchange field-induced displacement of the quantum dot towards the source electrode leads to a nonmonotonic behavior of the differential conductance, which demonstrates the lifting of spin-polaronic effects by an electric field. At high voltages the onset of electron shuttling results in a drop of the current and a negative differential conductance, caused by a mechanically induced increase of the tunnel resistances and an exchange field-induced suppression of spin-flips caused by an external magnetic field. The dependence of these predicted spin effects on the oscillation frequency of the dot and the strength of electron–electron correlations is discussed
URI
https://pr.ibs.re.kr/handle/8788114/7722
DOI
10.1016/j.physe.2020.114151
ISSN
1386-9477
Appears in Collections:
Center for Theoretical Physics of Complex Systems(복잡계 이론물리 연구단) > 1. Journal Papers (저널논문)
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