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Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction

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dc.contributor.authorJunghyun Kim-
dc.contributor.authorSuhan Son-
dc.contributor.authorMatthew J. Coak-
dc.contributor.authorInho Hwang-
dc.contributor.authorYoujin Lee-
dc.contributor.authorKaixuan Zhang-
dc.contributor.authorJe-Geun Park-
dc.date.accessioned2020-12-22T02:45:43Z-
dc.date.accessioned2020-12-22T02:45:43Z-
dc.date.available2020-12-22T02:45:43Z-
dc.date.available2020-12-22T02:45:43Z-
dc.date.created2020-10-16-
dc.date.issued2020-09-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/7642-
dc.description.abstract© 2020 Author(s). Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo-structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2 (FGT)/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I-V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be similar to 0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance. Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials. Published under license by AIP Publishing-
dc.description.uri1-
dc.language영어-
dc.publisherAMER INST PHYSICS-
dc.subjectWAALS-
dc.subjectFERROMAGNETISM-
dc.subjectCRYSTAL-
dc.titleObservation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000567598000001-
dc.identifier.scopusid2-s2.0-85091639414-
dc.identifier.rimsid73232-
dc.contributor.affiliatedAuthorJunghyun Kim-
dc.contributor.affiliatedAuthorSuhan Son-
dc.contributor.affiliatedAuthorInho Hwang-
dc.contributor.affiliatedAuthorYoujin Lee-
dc.contributor.affiliatedAuthorKaixuan Zhang-
dc.contributor.affiliatedAuthorJe-Geun Park-
dc.identifier.doi10.1063/5.0012305-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.128, no.9, pp.093901-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume128-
dc.citation.number9-
dc.citation.startPage093901-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusWAALS-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordPlusCRYSTAL-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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