Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy
DC Field | Value | Language |
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dc.contributor.author | Choi, Y | - |
dc.contributor.author | Kim, K | - |
dc.contributor.author | Lim, SY | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Park, JM | - |
dc.contributor.author | Jung Hwa Kim | - |
dc.contributor.author | Zonghoon Lee | - |
dc.contributor.author | Cheong, H | - |
dc.date.available | 2020-07-06T06:43:55Z | - |
dc.date.created | 2020-03-17 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.issn | 2055-6756 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/7176 | - |
dc.description.abstract | Polarized Raman spectroscopy on few-layer ReS2 and ReSe2 was carried out to determine the crystallographic orientations. Since monolayer ReX2 (X = S or Se) has a distorted trigonal structure with only an inversion center, there is in-plane anisotropy and the two faces of a monolayer crystal are not equivalent. Since many physical properties vary sensitively depending on the crystallographic orientation, it is important to develop a reliable method to determine the crystal axes of ReX2. By comparing the relative polarization dependences of some representative Raman modes measured with three different excitation laser energies with high-resolution scanning transmission electron microscopy, we established a reliable procedure to determine all three principal directions of few-layer ReX2, including a way to distinguish the two types of faces: a 2.41 eV laser for ReS2 or a 1.96 eV laser for ReSe2 should be chosen as the excitation source of polarized Raman measurements; then the relative directions of the maximum intensity polarization of the Raman modes at 151 and 212 cm(-1) (124 and 161 cm(-1)) of ReS2 (ReSe2) can be used to determine the face types and the Re-chain direction unambiguously. ©The Royal Society of Chemistry 2020 | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Complete determination of the crystallographic orientation of ReX2 (X = S, Se) by polarized Raman spectroscopy | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000511441800007 | - |
dc.identifier.scopusid | 2-s2.0-85079181070 | - |
dc.identifier.rimsid | 71576 | - |
dc.contributor.affiliatedAuthor | Jung Hwa Kim | - |
dc.contributor.affiliatedAuthor | Zonghoon Lee | - |
dc.identifier.doi | 10.1039/c9nh00487d | - |
dc.identifier.bibliographicCitation | NANOSCALE HORIZONS, v.5, no.2, pp.308 - 315 | - |
dc.citation.title | NANOSCALE HORIZONS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 308 | - |
dc.citation.endPage | 315 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FEW-LAYER RES2 | - |
dc.subject.keywordPlus | ATOMICALLY THIN | - |
dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
dc.subject.keywordPlus | PHASE DIFFERENCE | - |
dc.subject.keywordPlus | RHENIUM | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | SCATTERING | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | ANISOTROPY | - |