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One-dimensional hexagonal boron nitride conducting channel

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Title
One-dimensional hexagonal boron nitride conducting channel
Author(s)
Hyo Ju Park; Cha, J; Choi, M; Kim, JH; Tay, RY; Teo, EHT; Park, N; Hong, S; Zonghoon Lee
Publication Date
2020-03
Journal
SCIENCE ADVANCES, v.6, no.10, pp.eaay4958 -
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Abstract
Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA'/AB stacking boundaries in chemical vapor deposition-synthesized few-layer hBN. We find that the twin boundary is composed of a 6'6' configuration, showing conducting feature with a zero bandgap. Furthermore, the formation mechanism of the atomically sharp twin boundaries is suggested by an analogy with stacking combinations of AA'/AB based on the observations of extended Klein edges at the layer boundaries of AB-stacked hBN. The atomically sharp AA'/AB stacking boundary is promising as an ultimate 1D electron channel embedded in insulating pristine hBN. This study will provide insights into the fabrication of single-hBN electronic devices. © 2020 The Authors, some rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/7144
ISSN
2375-2548
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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