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다차원 탄소재료 연구단
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Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

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Title
Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs
Author(s)
Lee S.M.; Jung D.H.; Yoon S.; Jang Y.; Jung Hwan Yum; Eric S. Larsen; Christopher W. Bielawski; Oh J.
Publication Date
2020-03
Journal
APPLIED SURFACE SCIENCE, v.505, no., pp.144107 -
Publisher
ELSEVIER SCIENCE BV
Abstract
© 2019In this study, we demonstrated the band alignment between a BeO and AlGaN/GaN heterointerface. The bandgap of the BeO film was measured to be 8.2 ± 0.05 eV by reflection electron energy loss spectroscopy. A valence band offset of the BeO/AlGaN interface was determined to be 1.1 ± 0.1 eV by X-ray photoelectron spectroscopy. Based on the spectral analysis result, the conduction band offset was calculated to be 3.2 ± 0.1 eV. When BeO was used as the gate dielectric of an AlGaN/GaN transistor, the on/off current ratio was improved to 107. The results of the band alignment and electrical testing open up opportunities for the application of BeO films to the gate dielectric of GaN-based high-power devices
URI
https://pr.ibs.re.kr/handle/8788114/6986
ISSN
0169-4332
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
Files in This Item:
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