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양자나노과학 연구단
양자나노과학 연구단
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Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter

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Title
Near-Infrared Electroluminescence and Low Threshold Amplified Spontaneous Emission above 800 nm from a Thermally Activated Delayed Fluorescent Emitter
Author(s)
Ye, H; Dae Hyeon Kim; Chen, XK; Sandanayaka, ASD; Kim, JU; Zaborova, E; Canard, G; Tsuchiya, Y; Choi, EY; Wu, JW; Fages, F; Bredas, JL; Anthony D’Aléo; Ribierre, JC; Adachi, C
Publication Date
2018-10
Journal
CHEMISTRY OF MATERIALS, v.30, no.19, pp.6702 - 6710
Publisher
AMER CHEMICAL SOC
Abstract
Near-infrared (NIR) organic light-emitting devices have aroused increasing interest because of their potential applications such as information secured displays, photodynamic therapy, and optical telecommunication. While thermally activated delayed fluorescent (TADF) emitters have been used in a variety of high-performance organic light-emitting diodes (OLEDs) emitting in the visible spectral range, efficient NIR TADF materials have been rarely reported. Herein, we designed and synthesized a novel solution-processable NIR TADF dimeric borondifluoride curcuminoid derivative with remarkable photo physical, electroluminescence and amplified spontaneous emission properties. This dye was specifically developed to shift the emission of borondifluoride curcuminoid moiety toward longer wavelengths in the NIR region while keeping a high photoluminescence quantum yield. The most efficient OLED fabricated in this study exhibits a maximum external quantum efficiency of 5.1% for a maximum emission wavelength of 758 nm, which ranks among the highest performance for NIR electroluminescence. In addition, this NIR TADF emitter in doped thin films displays amplified spontaneous emission above 800 nm with a threshold as low as 7.5 mu J/cm(2), providing evidence that this material is suitable for the realization of high-performance NIR organic semiconductor lasers. © 2018 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/6950
ISSN
0897-4756
Appears in Collections:
Center for Quantum Nanoscience(양자나노과학 연구단) > Journal Papers (저널 논문)
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