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Crystal properties of atomic-layer deposited beryllium oxide on crystal and amorphous substrates

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Title
Crystal properties of atomic-layer deposited beryllium oxide on crystal and amorphous substrates
Author(s)
Lee S.M.; Jang Y.; Jung Hwan Yum; Eric S Larsen; Lee W.C.; Kim S.K.; Christopher W Bielawski; Oh J.
Publication Date
2019-10
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.11, pp.115021 -
Publisher
IOP PUBLISHING LTD
Abstract
© 2019 IOP Publishing Ltd.We present the crystal properties of beryllium oxide (BeO) films on Si (100), GaN (001), and amorphous SiO2 substrates grown by atomic-layer deposition (ALD). Because of the strong bonding interactions intrinsic to beryllium, BeO thin films have been grown in crystalline phases regardless of the substrate type. Transmission electron microscopy revealed crystallized BeO films with small interfacial layers. The epitaxial relationships and domain-matching configurations were confirmed by crystal simulation. Using x-ray diffraction analyses, ALD BeO films with thicknesses of 50 nm showed wurtzite (002) crystal phases for all substrates studied. Raman spectroscopy confirmed that the crystallinity of the BeO film grown on GaN was superior to that on Si and SiO2 substrates. Atomic force microscopy and water contact angle goniometry measurements indicated that the BeO film grown on GaN in a planar mode was due to its low film energy
URI
https://pr.ibs.re.kr/handle/8788114/6827
ISSN
0268-1242
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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