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Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure

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dc.contributor.authorLee, SH-
dc.contributor.authorJeong, H-
dc.contributor.authorKim, DY-
dc.contributor.authorSEUNGYOUNG SEO-
dc.contributor.authorCHEOLHEE HAN-
dc.contributor.authorOkello, OFN-
dc.contributor.authorLo, JI-
dc.contributor.authorPeng, YC-
dc.contributor.authorOh, CH-
dc.contributor.authorLee, GW-
dc.contributor.authorShim, JI-
dc.contributor.authorCheng, BM-
dc.contributor.authorSong, K-
dc.contributor.authorChoi, SY-
dc.contributor.authorMOON-HO JO-
dc.contributor.authorKim, JK-
dc.date.available2019-11-13T07:33:21Z-
dc.date.created2019-08-20-
dc.date.issued2019-07-
dc.identifier.issn0146-9592-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/6460-
dc.description.abstract© 2019 Optical Society of America.Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials-
dc.description.uri1-
dc.language영어-
dc.publisherOPTICAL SOC AMER-
dc.titleElectroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000474429600053-
dc.identifier.scopusid2-s2.0-85068550954-
dc.identifier.rimsid69128-
dc.contributor.affiliatedAuthorSEUNGYOUNG SEO-
dc.contributor.affiliatedAuthorCHEOLHEE HAN-
dc.contributor.affiliatedAuthorMOON-HO JO-
dc.identifier.doi10.1364/OE.27.019692-
dc.identifier.bibliographicCitationOPTICS LETTERS, v.27, no.14, pp.19692 - 19701-
dc.citation.titleOPTICS LETTERS-
dc.citation.volume27-
dc.citation.number14-
dc.citation.startPage19692-
dc.citation.endPage19701-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlus2-DIMENSIONAL MATERIALS-
dc.subject.keywordPlusDIELECTRIC-BREAKDOWN-
dc.subject.keywordPlusQUANTUM EMISSION-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusCRYSTALLINE-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusEMITTERS-
dc.subject.keywordPlusDEFECTS-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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2019_Optics Letter_조문호(공동)_Electroluminescence from h-BN by using Al2O3h-BN multiple heterostructure.pdfDownload

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