Surface-Mediated Recrystallization for Highly Conducting Organic Radical Crystal
DC Field | Value | Language |
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dc.contributor.author | Taeyeon Kwon | - |
dc.contributor.author | Koo J.Y. | - |
dc.contributor.author | Hee Cheul Choi | - |
dc.date.available | 2019-07-19T05:39:57Z | - |
dc.date.created | 2019-02-18 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.issn | 1528-7483 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5904 | - |
dc.description.abstract | Electrically conducting cation-charged dihydrophenazinium radical (H 2 PNZ •+ ) crystals were formed by a one-pot photoreaction. Furthermore, new secondary crystals were grown directly from the H 2 PNZ •+ crystal surface through a surface-mediated recrystallization (SMR) process by a secondary photoreaction with water. Depending on the absence or presence of light during the exposure of the H 2 PNZ •+ single crystal to water, neutral yellow PNZ crystals (SMR Y ) or densely packed green H 2 PNZ •+ crystals (SMR G ) were formed, respectively, on the surface of the mother H 2 PNZ •+ crystal. The single-crystal X-ray analysis reveals that the newly obtained SMR G radical crystal exhibits a shorter intercolumnar distance than the original H 2 PNZ •+ crystal, resulting in increased electrical conductivity. Copyright © 2019 American Chemical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Surface-Mediated Recrystallization for Highly Conducting Organic Radical Crystal | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000458348000007 | - |
dc.identifier.scopusid | 2-s2.0-85059783733 | - |
dc.identifier.rimsid | 67022 | - |
dc.contributor.affiliatedAuthor | Taeyeon Kwon | - |
dc.contributor.affiliatedAuthor | Hee Cheul Choi | - |
dc.identifier.doi | 10.1021/acs.cgd.8b01686 | - |
dc.identifier.bibliographicCitation | CRYSTAL GROWTH & DESIGN, v.19, no.2, pp.551 - 555 | - |
dc.citation.title | CRYSTAL GROWTH & DESIGN | - |
dc.citation.volume | 19 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 551 | - |
dc.citation.endPage | 555 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |