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Interface-Driven Partial Dislocation Formation in 2D Heterostructures

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Title
Interface-Driven Partial Dislocation Formation in 2D Heterostructures
Author(s)
Jung Hwa Kim; Se-Yang Kim; Yeonchoo Cho; Hyo Ju Park; Hyeon-Jin Shin; Soon-Yong Kwon; Zonghoon Lee
Publication Date
2019-04
Journal
ADVANCED MATERIALS, v.31, no.15, pp.1807486 -
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Van der Waals (vdW) epitaxy allows the fabrication of various heterostructures with dramatically released lattice matching conditions. This study demonstrates interface-driven stacking boundaries in WS 2 using epitaxially grown tungsten disulfide (WS 2 ) on wrinkled graphene. Graphene wrinkles function as highly reactive nucleation sites on WS 2 epilayers; however, they impede lateral growth and induce additional stress in the epilayer due to anisotropic friction. Moreover, partial dislocation-driven in-plane strain facilitates out-of-plane buckling with a height of 1 nm to release in-plane strain. Remarkably, in-plane strain relaxation at partial dislocations restores the bandgap to that of monolayer WS 2 due to reduced interlayer interaction. These findings clarify significant substrate morphology effects even in vdW epitaxy and are potentially useful for various applications involving modifying optical and electronic properties by manipulating extended 1D defects via substrate morphology control. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/5864
ISSN
0935-9648
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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5. Kim_et_al-2019-Advanced_Materials.pdfDownload

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