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Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

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Title
Domain epitaxy of crystalline BeO films on GaN and ZnO substrates
Author(s)
Seung Min Lee; Jung Hwan Yum; Eric S. Larsen; Shahab Shervin; Weijie Wang; Jae-Hyun Ryou; Christopher W. Bielawski; Woo Chul Lee; Seong Keun Kim; Jungwoo Oh
Publication Date
2019-06
Journal
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.102, no.6, pp.3745 - 3752
Publisher
WILEY
Abstract
We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102}(BeO)||(002){102}(Sub) orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 m (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates. © 2018 The American Ceramic Society
URI
https://pr.ibs.re.kr/handle/8788114/5838
ISSN
0002-7820
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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5. Lee_et_al-2019-Journal_of_the_American_Ceramic_Society.pdfDownload

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