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What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition?

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Title
What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition?
Author(s)
Ding Yi; Da Luo; Zhu-Jun Wang; Jichen Dong; Xu Zhang; Marc-Georg Willinger; Rodney S. Ruoff; Feng Ding
Publication Date
2018-06
Journal
PHYSICAL REVIEW LETTERS, v.120, no.24, pp.246101
Publisher
AMER PHYSICAL SOC
Abstract
Compressive strain relaxation of a chemical vapor deposition (CVD) grown graphene overlayer has been considered to be the main driving force behind metal surface step bunching (SB) in CVD graphene growth. Here, by combining theoretical studies with experimental observations, we prove that the SB can occur even in the absence of a compressive strain, is enabled by the rapid diffusion of metal adatoms beneath the graphene and is driven by the release of the bending energy of the graphene overlayer in the vicinity of steps. Based on this new understanding, we explain a number of experimental observations such as the temperature dependence of SB, and how SB depends on the thickness of the graphene film. This study also shows that SB is a general phenomenon that can occur in all substrates covered by films of two-dimensional (2D) materials © 2018 American Physical Society
URI
https://pr.ibs.re.kr/handle/8788114/5498
DOI
10.1103/PhysRevLett.120.246101
ISSN
0031-9007
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
21. PhysRevLett.120.246101.pdfDownload

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