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강상관계물질연구단
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Volatile two-dimensional electron gas in ultrathin BaTiO3 films

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dc.contributor.authorLutz P.-
dc.contributor.authorMoser S.-
dc.contributor.authorJovic V.-
dc.contributor.authorChang Y.J.-
dc.contributor.authorKoch R.J.-
dc.contributor.authorUlstrup S.-
dc.contributor.authorJi Seop Oh-
dc.contributor.authorMoreschini L.-
dc.contributor.authorFatale S.-
dc.contributor.authorGrioni M.-
dc.contributor.authorJozwiak C.-
dc.contributor.authorBostwick A.-
dc.contributor.authorRotenberg E.-
dc.contributor.authorBentmann H.-
dc.contributor.authorReinert F.-
dc.date.available2019-01-30T02:01:20Z-
dc.date.created2019-01-15-
dc.date.issued2018-09-
dc.identifier.issn2475-9953-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5431-
dc.description.abstractWe investigate the metallic surface state in ultrathin films of BaTiO3 by angle-resolved photoemission spectroscopy. We find Fermi-surface contours derived from the Ti 3dt2g conduction band, similar as in SrTiO3 but with broader spectral features due to enhanced quasiparticle scattering. Oxygen vacancies created in the x-ray beam spot allow for reversible in situ doping control up to surface carrier densities as high as 1014cm-2, but vacancy migration into the subsurface at T��285K quenches the surface state. Our analysis suggests that the charge state of oxygen vacancies in ultrathin films is predominantly 2+, which limits charge-carrier trapping and the formation of localized defect states. ? 2018 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleVolatile two-dimensional electron gas in ultrathin BaTiO3 films-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000446295400004-
dc.identifier.scopusid2-s2.0-85059699600-
dc.identifier.rimsid66710-
dc.contributor.affiliatedAuthorJi Seop Oh-
dc.identifier.doi10.1103/PhysRevMaterials.2.094411-
dc.identifier.bibliographicCitationPHYSICAL REVIEW MATERIALS, v.2, no.9, pp.094411-1 - 094411-5-
dc.citation.titlePHYSICAL REVIEW MATERIALS-
dc.citation.volume2-
dc.citation.number9-
dc.citation.startPage094411-1-
dc.citation.endPage094411-5-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
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Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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