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원자제어 저차원 전자계 연구단
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Tailoring the electronic properties of Ca2RuO4 via epitaxial strain

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Title
Tailoring the electronic properties of Ca2RuO4 via epitaxial strain
Author(s)
C. Dietl; S. K. Sinha; G. Christiani; Y. Khaydukov; T. Keller; D. Putzky; S. Ibrahimkutty; P. Wochner; G. Logvenov; P. A. van Aken; Bumjoon Kim; B. Keimer
Publication Date
2018-01
Journal
APPLIED PHYSICS LETTERS, v.112, no.3, pp.031902 -
Publisher
AMER INST PHYSICS
Abstract
We establish strain engineering of ruthenium oxides as a method to controllably induce phase transitions between electronic ground states with vastly different electrical and magnetic properties. Specifically, we show that the epitaxial strain acting on Ca2RuO4 thin films on NdCaAlO4 (110), LaAlO3 (100), and LaSrAlO4 (001) substrates induces a transition from the Mott-insulating phase of bulk Ca2RuO4 into a metallic phase. Magnetometry and spin-polarized neutron reflectometry reveal a low-temperature, small-moment ferromagnetic state in Ca2RuO4 films on LaAlO3 (100) and LaSrAlO4(001). Thin-film structures may open up new ways to investigate and utilize the electronic response of ruthenates to lattice modification.
URI
https://pr.ibs.re.kr/handle/8788114/5301
ISSN
0003-6951
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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