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IBS Publications RepositoryCenter for Underground Physics(지하실험 연구단)1. Journal Papers (저널논문)

Study of silicon photomultiplier performance in external electric fields

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Title: Study of silicon photomultiplier performance in external electric fields

Author(s): Sun, XL; Tolba, T; Cao, GF; Lv, P; Wen, LJ; Odian, A; Vachon, F; Alamre, A; Albert, JB; Anton, G; Arnquist, IJ; Badhrees, I; Barbeau, PS; Beck, D; Belov, V; Bhatta, T; Bourque, F; Brodsky, JP; Brown, E; Brunner, T; Burenkov, A; Cao, L; Cen, WR; Chambers, C; Charlebois, SA; Chiu, M; Cleveland, B; Coon, M; Cote, M; Craycraft, A; Cree, W; Dalmasson, J; Daniels, T; Darroch, L; Daugherty, SJ; Daughhetee, J; Delaquis, S; Mesrobian-Kabakian, AD; DeVoe, R; Dilling, J; Ding, YY; Dolinski, MJ; Dragone, A; Echevers, J; Fabris, L; Fairbank, D; Fairbank, W; Farine, J; Feyzbakhsh, S; Fierlinger, P; Fontaine, R; Fudenberg, D; Gallina, G; Giacomini, G; Gornea, R; Gratta, G; Hansen, EV; Harris, D; Heffner, M; Hoppe, EW; Hossl, J; House, A; Hufschmidt, P; Hughes, M; Ito, Y; Iverson, A; Jamil, A; Jessiman, C; Jewell, MJ; Jiang, XS; Karelin, A; Kaufman, LJ; Kodroff, D; Koffas, T; Kravitz, S; Krucken, R; Kuchenkov, A; Kumar, KS; Lan, Y; Larson, A; Leonard, Douglas S; Li, G; Li, S; Li, Z; Licciardi, C; Lin, YH; MacLellan, R; Michel, T; Moe, M; Mong, B; Moore, DC; Murray, K; Newby, RJ; Ning, Z; Njoya, O; Nolet, F; Nusair, O; Odgers, K; Oriunno, M; Orrell, JL; Ortega, GS; Ostrovskiy, I; Overman, CT; Parent, S; Piepke, A; Pocar, A; Pratte, JF; Qiu, D; Radeka, V; Raguzin, E; Rao, T; Rescia, S; Retiere, F; Robinson, A; Rossignol, T; Rowson, PC; Roy, N; Saldanha, R; Sangiorgio, S; Schmidt, S; Schneider, J; Sinclair, D; Skarpaas, K; Soma, AK; St-Hilaire, G; Stekhanov, V; Stiegler, T; Tarka, M; Todd, J; Totev, TI; Tsang, R; Tsang, T; Veenstra, B; Veeraraghavan, V; Visser, G; Vuilleumier, JL; Wagenpfeil, M; Wang, Q; Watkins, J; Weber, M; Wei, W; Wichoski, U; Wrede, G; Wu, SX; Wu, WH; Xia, Q; Yang, L; Yen, YR; Zeldovich, O; Zhao, J; Zhou, Y; Ziegler, T

Subject: Cryogenic detectors, ; Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTS, G-APDs, CCDs, EBCCDs, EMCCDs etc), ; Double-beta decay detectors, ; Noble liquid detectors (scintillation, ionization, double-phase)

Publication Date: 2018-09

Journal: JOURNAL OF INSTRUMENTATION, v.13, no.9, pp.T09006

Publisher: IOP PUBLISHING LTD

Abstract: We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. (c)2018 IOP Publishing Ltd and Sissa Medialab