Study of silicon photomultiplier performance in external electric fields

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Title
Study of silicon photomultiplier performance in external electric fields
Author(s)
Sun, XL; Tolba, T; Cao, GF; Lv, P; Wen, LJ; Odian, A; Vachon, F; Alamre, A; Albert, JB; Anton, G; Arnquist, IJ; Badhrees, I; Barbeau, PS; Beck, D; Belov, V; Bhatta, T; Bourque, F; Brodsky, JP; Brown, E; Brunner, T; Burenkov, A; Cao, L; Cen, WR; Chambers, C; Charlebois, SA; Chiu, M; Cleveland, B; Coon, M; Cote, M; Craycraft, A; Cree, W; Dalmasson, J; Daniels, T; Darroch, L; Daugherty, SJ; Daughhetee, J; Delaquis, S; Mesrobian-Kabakian, AD; DeVoe, R; Dilling, J; Ding, YY; Dolinski, MJ; Dragone, A; Echevers, J; Fabris, L; Fairbank, D; Fairbank, W; Farine, J; Feyzbakhsh, S; Fierlinger, P; Fontaine, R; Fudenberg, D; Gallina, G; Giacomini, G; Gornea, R; Gratta, G; Hansen, EV; Harris, D; Heffner, M; Hoppe, EW; Hossl, J; House, A; Hufschmidt, P; Hughes, M; Ito, Y; Iverson, A; Jamil, A; Jessiman, C; Jewell, MJ; Jiang, XS; Karelin, A; Kaufman, LJ; Kodroff, D; Koffas, T; Kravitz, S; Krucken, R; Kuchenkov, A; Kumar, KS; Lan, Y; Larson, A; Leonard, Douglas S; Li, G; Li, S; Li, Z; Licciardi, C; Lin, YH; MacLellan, R; Michel, T; Moe, M; Mong, B; Moore, DC; Murray, K; Newby, RJ; Ning, Z; Njoya, O; Nolet, F; Nusair, O; Odgers, K; Oriunno, M; Orrell, JL; Ortega, GS; Ostrovskiy, I; Overman, CT; Parent, S; Piepke, A; Pocar, A; Pratte, JF; Qiu, D; Radeka, V; Raguzin, E; Rao, T; Rescia, S; Retiere, F; Robinson, A; Rossignol, T; Rowson, PC; Roy, N; Saldanha, R; Sangiorgio, S; Schmidt, S; Schneider, J; Sinclair, D; Skarpaas, K; Soma, AK; St-Hilaire, G; Stekhanov, V; Stiegler, T; Tarka, M; Todd, J; Totev, TI; Tsang, R; Tsang, T; Veenstra, B; Veeraraghavan, V; Visser, G; Vuilleumier, JL; Wagenpfeil, M; Wang, Q; Watkins, J; Weber, M; Wei, W; Wichoski, U; Wrede, G; Wu, SX; Wu, WH; Xia, Q; Yang, L; Yen, YR; Zeldovich, O; Zhao, J; Zhou, Y; Ziegler, T
Publication Date
2018-09
Journal
JOURNAL OF INSTRUMENTATION, v.13, no.9, pp.T09006 -
Publisher
IOP PUBLISHING LTD
Abstract
We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. (c)2018 IOP Publishing Ltd and Sissa Medialab
URI
https://pr.ibs.re.kr/handle/8788114/5183
ISSN
1748-0221
Appears in Collections:
Center for Underground Physics(지하실험 연구단) > Journal Papers (저널논문)
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